Trends and Forecast for the Silicon Carbide in the Global High Voltage Application MarketTrends, opportunities and forecast in silicon carbide in the global high voltage application market to 2027 by device type (SiC diode, SIC MOSFET, and SiC module), application (EV motor drives, EV charging stations, and power transmissions (FACTS and HVDC)), wafer size (2 inch, 4 inch, and 6 inch and above), and region (North America, Europe, Asia Pacific, and the Rest of the World)Lucintel's latest market report analyzed that silicon carbide in the global high voltage application provides attractive opportunities in EV motor drives, EV charging stations, and power transmissions. The silicon carbide in the global high voltage application market is expected to grow with a CAGR of 23%-26%. In this market, EV motor drive is the largest segment by application.
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Based on application, the silicon carbide in the global high voltage application market is segmented into EV motor drives, EV charging stations, and power transmissions (FACTS and HVDC). The EV motor drives segment is expected to register the highest CAGR during the forecast period due to increasing production of electric vehicles as the rising fuel prices and government initiatives to reduce environmental pollution are driving the demand for silicon carbide in the high voltage application market.
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The silicon carbide in the global high voltage application market is marked by the presence of several big and small players. Some of the prominent players offering Silicon carbide in the global high voltage application include Infineon Technologies, Cree, ROHM, STMicroelectronics, Fuji Electric, ON Semiconductor, General Electric, Toshiba Corporation, Renesas Electronics, and Microchip Technology.
This unique research report will enable you to make confident business decisions in this globally competitive marketplace. For a detailed table of contents, contact Lucintel at +1-972-636-5056 or click on this link helpdesk@lucintel.com.
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